Samsung Intros 9.8 Gbps HBM3E “Shinebolt”, 32 Gbps GDDR7, 7.5 Gbps LPDDR5x CAMM2 Memory
Samsung has officially introduced its next-gen memory technologies including HBM3E, GDDR7, LPDDR5x CAMM2, and more during its Memory Tech Day 2023.
We have already reported the developments on the Samsung HBM3E memory codenamed "Shine Bolt" and GDDR7 for next-generation AI, Gaming, and data center applications. These can be seen as the two biggest highlights of the Memory Tech Day 2023 but Samsung sure has a lot more action going on.
Building on Samsung’s expertise in commercializing the industry’s first HBM2 and opening the HBM market for high-performance computing (HPC) in 2016, the company today revealed its next-generation HBM3E DRAM, named Shinebolt. Samsung’s Shinebolt will power next-generation AI applications, improving total cost of ownership (TCO) and speeding up AI-model training and inference in the data center.
The HBM3E boasts an impressive speed of 9.8 gigabits-per-second (Gbps) per pin speed, meaning it can achieve transfer rates exceeding more than 1.2 terabytes-per-second (TBps). In order to enable higher-layer stacks and improve thermal characteristics, Samsung has optimized its non-conductive film (NCF) technology to eliminate gaps between chip layers and maximize thermal conductivity. Samsung’s 8H and 12H HBM3 products are currently in mass production and samples for Shinebolt are shipping to customers.
Leaning into its strength as a total semiconductor solutions provider, the company also plans to offer a custom turnkey service that combines next-generation HBM, advanced packaging technologies, and foundry offerings together.
Other products highlighted at the event include the 32Gb DDR5 DRAM with the industry’s highest capacity, the industry’s first 32Gbps GDDR7, and the petabyte-scale PBSSD, which
Read more on wccftech.com
