Samsung Begins 12nm DDR5 16 Gb DRAM Mass Production: Up To 7200 Mbps & 23% Efficient

wccftech.com:

Samsung has commenced the mass production of its brand new 16 Gb DDR5 DRAM which will utilize a 12nm process node.

Press Release: Samsung Electronics, a world leader in advanced memory technology, today announced that its 16-gigabit (Gb) DDR5 DRAM, which utilizes the industry’s most advanced 12 nanometers (nm)-class process technology, has started mass production. Samsung’s completion of the state-of-the-art manufacturing process reaffirms its leadership in cutting-edge DRAM technology.

Compared to the previous generation, Samsung’s new 12nm-class DDR5 DRAM reduces power consumption by up to 23% while enhancing wafer productivity by up to 20%. Its outstanding power efficiency makes it the ideal solution for global IT companies that want to reduce the energy consumption and carbon footprint of their servers and data centers.

Samsung’s development of 12nm-class process technology was made possible thanks to the use of a new high-κ material that helps increase cell capacitance. High capacitance results in a significant electric potential difference in the data signals, which makes it easier to accurately distinguish them. The company’s efforts to lower operating voltage and reduce noise have also helped deliver the optimal solution that customers need.

Boasting a maximum speed of 7.2 gigabits per second (Gbps) — translating into speeds that can process two 30GB UHD movies in about a second — Samsung’s 12nm-class DDR5 DRAM lineup will support a growing list of applications including data centers, artificial intelligence, and next-generation computing.

Samsung continues to collaborate with global IT companies to drive innovation in the next-generation DRAM market. Samsung's 16-Gigabit DDR5 DRAM completed evaluation for