Samsung To Officially Unveil Its 3nm, 4nm Technologies In June, With Up To 34 Percent Power Efficiency Improvements
In an attempt to compete with TSMC while also making efforts to take its foundry business to new heights, Samsung is all set to unveil its 3nm and 4nm technologies at the VLSI Symposium 2023 in June. Coming to the specifics, the Korean giant will showcase the benefits of its SF3 and SF4X processes, and we will provide their advantages here.
The SF3 process will utilize Samsung’s 3nm GAP technology and will rely on GAA, or Gate All Around transistor, which the manufacturer refers to as MBCFETs, or Multi-Bridge-Channel Field-Effect Transistors. This approach is said to bring further improvements to SF3, but strange enough, Samsung has not directly compared this technology to its first-generation 3nm one, suggesting that the difference may not be much.
As for SF4X, it is Samsung’s fourth-generation 4nm process and offers a 10 percent performance improvement and 23 percent power-efficiency improvement compared to SF4, which is Samsung’s second-generation 4nm process. SF4X will compete with TSMC’s N4P node, which is reportedly being used to mass produce the upcoming Snapdragon 8 Gen 3 and Dimensity 9300. Additionally, this manufacturing process will take on the Taiwanese giant’s N4X node, which is its third 4nm iteration.
The SF3 process is said to be 22 percent faster than SF4 while operating at the same power limit and 34 percent more efficient when running at the same frequency and transistor count. There is also a 21 percent reduction in the logic area. Unsurprisingly, we do not have any information on the list of potential clients that have shown interest in Samsung’s latest technologies, but past rumors claim that Qualcomm could be exploring a dual-sourcing option for its Snapdragon chipsets.
AMD, too is said to be
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