Micron Unveils 16 Gb DDR5-7200 MT/s Memory Built Upon High-End 1β Process Technology
Micron has unveiled its brand new 16 Gb DDR5 DRAM for server and PC memory applications, offering up to 7200 MT/s speeds thanks to 1β node.
Press Release: Micron Technology, today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16 Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking, and clock sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.
As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers.
The high-volume manufacturing and availability of 1β DDR5 DRAM for client and data center platforms signals an important milestone in the industry. Our collaboration with our ecosystem partners and customers will drive faster adoption of these higher-performance memory offerings.
-Brian Callaway, Corporate VP of Micron's Core Compute Design Engineering Group
The 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.
Micron's 1β technology enables Micron to
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