Samsung is reported to stick with a dual-chipset launch strategy for its upcoming Galaxy S25 series, where some regions will offer the Snapdragon 8 Gen 4, while others will sell the Exynos 2500 variants. The Exynos 2400 provided a slew of surprises as the company significantly improved its current-generation flagship SoC. Next year, Samsung is expected to kick things up a notch and is rumored to leverage its second-generation 3nm process to mass produce the Exynos 2500. This move could give the SoC power efficiency attributes that dwarf Qualcomm’s upcoming Snapdragon 8 Gen 4.
The rumor comes from PandaFlash on X, who previously posted that the Exynos 2500 outperforms the Snapdragon 8 Gen 3 in both CPU and GPU categories. This performance could be due to Samsung’s testing the silicon on its second-generation 3nm process, which allows the new SoC to run at higher clock speeds at the same power consumption level. We will not be surprised to hear that the Exynos 2500 uses Samsung’s advanced ‘Fan-out Wafer Level Packaging,’ or FOWLP, as the Exynos 2400 has adopted the same technology.
In a nutshell, FOWLP increases heat resistance and reduces the chipset’s package size, allowing it to run at its maximum capability for more extended periods, ultimately contributing to a higher multi-core score. Assuming the rumor checks out, beating the Snapdragon 8 Gen 4 is no walk in the park, but we have reported that Qualcomm’s flagship SoC is suffering from power consumption troubles, forcing phone makers to use massive 5,500mAh batteries to compensate for this issue.
In this regard, Samsung may have found an opportunity to bolster its reputation with the Exynos brand, but only if it can address the yield
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