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Korean chaebol Samsung Electronics believes it can overcome the Taiwan Semiconductor Manufacturing Company (TSMC) in five years as both firms roll out the next generation 2-nanometer semiconductor manufacturing process. Samsung, one of the world's largest companies, has nevertheless struggled to gain a lead in non-memory chip fabrication as its smaller rival, TSMC, becomes the world's premier contact chip manufacturer. However, Samsung aims to close the technological gap between it and the Taiwanese firm by employing Gate All Around (GAA) transistors for the 3-nanometer process, the leading edge semiconductor node, in 2023.
Samsung's president and general manager of the foundry business of the Device Solutions business division Dr. Siyoung Choi made the remarks during a keynote held in South Korea earlier today. The event was held at the Korea Advanced Institute of Science & Technology (KAIST) in Daejeon. It saw the executive answer attendees' questions about the state of Samsung's chip business and its plans for the future.
Dr. Choi shared that right now, TSMC is far ahead of Samsung regarding chipmaking prowess. He believes it will take Samsung five years to catch up to and beat TSMC, even though both firms are currently making 3-nanometer semiconductors. While the marketing name for these technologies might be similar, they are quite different in design as Samsung utilizes the newer GAA technologies to make the transistors while TSMC relies on the tried and tested FinFET model.
The usage of GAA is crucial, believes Dr. Choi, since he believes that Samsung's 4-nanometer technology is
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