SK hynix’s 1c “6th Gen 10nm” Node Leveraged By 16Gb DDR5 & Headed To LPDDR6, HBM & GDDR7
SK hynix has developed the world's first DDR5 memory with the 1c "6th Gen 10nm" node & will also bring it to HBM, LPDDR6 & GDDR7 products.
World's First 1c DDR5 Memory Developed By SK Hynix, Offers 11% Speed-Up & Up To 8000 MT/s Speeds
Press Release: SK hynix Inc. announced today that it had developed the industry’s first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process. The success marks the beginning of the extreme scaling to the level closer to 10nm in the memory process technology.
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- 1c node, 6th generation of 10nm process, developed most efficiently by applying the platform of industry-leading 1b technology
- Cost competitiveness improved with the adoption of new material, and optimization of the EUV process, while power efficiency enhanced to help reduce the electricity cost of data centers by 30% maximum
- Mass production is expected to be ready this year for volume shipment in 2025
- Application of 1c node to leading-edge DRAM products to bring differentiated values to customers
The degree of difficulty in advancing the shrinking process of the 10nm-range DRAM technology has grown over generations, but SK hynix has become the first in the industry to overcome the technological limitations by raising the level of completion in design, thanks to its industry-leading technology of the 1b, the fifth generation of the 10nm process.
SK hynix said it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year. To reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, which is widely applauded for its best-performing DRAM, most efficiently, the company extended the platform of the 1b DRAM for the development of 1c.
The new product comes with an improvement in cost competitiveness, compared with the previous generation, by adopting a new material in a
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