Samsung has discussed its plans to offer up to Petabytes of capacities in its SSDs with future 3D NAND tech though they may come after a decade.
At this year's China Flash Memory Market Summit (CFMS2023), Samsung Electronics was in attendance, along with other prominent flash memory companies, such as Micron, Kioxa, Arm, Solidigm, Phison, and more. Samsung Electronics discussed with the audience the topic of "Re-evolution of Flash Memory and Towards a New Era." This discussion highlighted the company's capability of high-level memory capacities and the struggles with reaching such a high capacity with its 3D NAND flash memory.
Kyungryun Kim, VP/GM of NAND Product Planning Group at Samsung Electronics, explained that three levels of technology — physical scaling, logical scaling, and package technology — are not only evolving but are theoretically capable of reaching capacities of one petabyte (PB), or 1,024 terabytes (TB). However, the company will not achieve that goal for another ten years by today's current technological standards. Additionally, the company is looking to utilize quad-level cell technology for more memory devices and focusing on making the technology more adept.
While discussing the evolutionary pathways of reaching penta-level capacities, the company also displayed the PM1743 series PCIe 5.0 solid-state drive (SSD). The new PM1743 series is up to forty percent more energy efficient than previous models and has been tested to be compatible with Intel and AMD PCIe Gen 5 platforms.
Samsung has always been somewhat quiet in discussing its technological advances, especially 3D NAND memory. The company is continuing to find ways of bringing quad-level cell 3D NAND devices to the public with a more extensive
Read more on wccftech.com