Micron Unveils UFS 4.0 Storage For Smartphones, Tablets, With 232-Layer 3D NAND; Up To 4,300MB/s Data Transfer Speeds & Improved Efficiency
Micron has announced its own version of UFS 4.0 storage that will be found in future smartphones, tablets, and other devices. The next-generation flash storage flaunts incredible read and write speeds, going beyond the PCIe Gen 3.0 standard while also touting power-efficiency improvements.
The new UFS 4.0 memory is made on Micron’s 232-layer NAND technology, allowing the U.S. firm to add more bits per square meter, resulting in higher density, and lowered power consumption, making it ideal for various use cases.
“Micron’s latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance. Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones.”
One of UFS 4.0 storage’s biggest strengths is increased sequential read and write speeds, and according to the numbers that Micron has published, its flash memory outpaces Samsung’s UFS 4.0 chips. The company states that its NAND flash can reach sequential read speeds of 4,300MB/s and sequential write speeds of 4,000MB/s. With these upgrades, Micron states that smartphone apps will launch 15 percent faster, and mobile devices will have a 20 percent faster bootup speed compared to UFS 3.1.
The new technology is also said to be 25 percent more power-efficient compared to the previous standard, along with a 10 percent write advantage compared to the competition. Micron was kind enough to provide a different stat, claiming that users can download two hours of 4K streaming content in less than 15
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