During its Q3 2023 earnings report, Micron presented its brand new DRAM roadmap which unveils next-gen HBM3 products, GDDR7 & denser DDR5 dies.
Micron kicked off its earnings call with the unveiling of the industry's fastest and highest-capacity HBM DRAM to date. This new HBM solution is referred to as HBM3 Gen2 and will be utilizing a 1β process node to deliver faster speeds and denser capacities. So let's get on with the technical and detailed breakdown.
The Micron HBM3 Gen2 seems to be an intermediate solution that will serve as the transition to the next-gen HBM standard which still seems to be a couple of years away. As such, Micron will be boosting the existing HBM3 standard to its maximum potential. The first iteration of HBM3 Gen2 is going to feature an 8-Hi design, offering up to 24 GB capacities and bandwidth exceeding 1.2 TB/s with up to 2.5x the performance per watt of the prior generation. The DRAM will operate at speeds of 9.2 Gb/s which is a 50% boost over the existing standard which runs around 4.6 Gb/s speeds. It's expected to launch in 2024.
At the same time, Micron will also begin sampling its 2nd iteration of the HBM3 Gen2 DRAM that will be launching in 2025. This HBM3 Gen2 DRAM will offer a 12-Hi design with up to 36 GB DRAM capacities and once again, speeds that exceed 1.2 TB/s of bandwidth. Both HBM3 Gen2 solutions will be targeted at the AI and Generative space which has taken the industry by storm.
But there's more, the company also listed its HBMNext DRAM solution which might be referring to HBM4. This solution will feature capacities ranging from 36 GB to 64 GB and bandwidth between 1.5 to 2+ TB/s. Competitor of Micron, SK Hynix, is also prepping to launch its next-gen HBM4 DRAM solution by 2026,
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