NVIDIA is expected to mass produce its next-generation Rubin R100 GPUs with HBM4 memory on the TSMC 3nm node by Q4 2025.
NVIDIA's Next-Gen Rubin R100 GPUs To Focus On Power Efficiency While Increasing AI Performance, To Use HBM4 Memory & TSMC 3nm Node
The new information comes from TF International Securities analyst, Mich-Chi Kuo, who states that NVIDIA has laid the groundwork for its next-generation Rubin R100 GPUs named after Vera Rubin, an American astronomer who made significant contributions to the understanding of dark matter in the universe while also pioneering work on galaxy rotation rate.
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Kuo states that the NVIDIA Rubin R100 GPUs will be part of the R-series lineup and are expected to be mass-produced in the fourth quarter of 2025 while systems such as DGX and HGX solutions are expected to be mass-produced in the first half of 2026. NVIDIA recently unveiled its next-generation Blackwell B100 GPUs which feature a monumental increase in AI performance and are the first proper chiplet design from the company that first laid its foundation in the Ampere GPU.
It is expected that NVIDIA's Rubin R100 GPUs will use a 4x reticle design (versus 3.3x of Blackwell) and will be made using the TSMC CoWoS-L packaging technology on the N3 process node. TSMC recently laid out plans for up to 5.5x reticle size chips by 2026 which would feature a 100x100mm substrate and allow for up to 12 HBM sites versus 8 HBM sites on current 80x80mm packages.
The semiconductor company also plans to move to a new SoIC design which will feature a greater than 8x reticle size in a 120x120mm package configuration. These are still being planned out so we can more realistically expect somewhere between 4x reticle size for Rubin GPUs.
Other information mentioned states that NVIDIA will be utilizing the next-generation HBM4 DRAM to power its R100 GPUs. The company currently leverages the fastest
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Hassan Mujtaba